JPH0418458B2 - - Google Patents
Info
- Publication number
- JPH0418458B2 JPH0418458B2 JP56192183A JP19218381A JPH0418458B2 JP H0418458 B2 JPH0418458 B2 JP H0418458B2 JP 56192183 A JP56192183 A JP 56192183A JP 19218381 A JP19218381 A JP 19218381A JP H0418458 B2 JPH0418458 B2 JP H0418458B2
- Authority
- JP
- Japan
- Prior art keywords
- strain
- base
- transistor
- region
- carrier
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/40—Crystalline structures
Landscapes
- Bipolar Transistors (AREA)
- Die Bonding (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56192183A JPS5893272A (ja) | 1981-11-30 | 1981-11-30 | 半導体装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56192183A JPS5893272A (ja) | 1981-11-30 | 1981-11-30 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5893272A JPS5893272A (ja) | 1983-06-02 |
JPH0418458B2 true JPH0418458B2 (en]) | 1992-03-27 |
Family
ID=16287053
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56192183A Granted JPS5893272A (ja) | 1981-11-30 | 1981-11-30 | 半導体装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5893272A (en]) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7262484B2 (en) | 2005-05-09 | 2007-08-28 | International Business Machines Corporation | Structure and method for performance improvement in vertical bipolar transistors |
-
1981
- 1981-11-30 JP JP56192183A patent/JPS5893272A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS5893272A (ja) | 1983-06-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5928992B2 (ja) | Mosトランジスタおよびその製造方法 | |
JPH01264253A (ja) | 半導体装置の製造方法 | |
US4046606A (en) | Simultaneous location of areas having different conductivities | |
JPS63257231A (ja) | 半導体装置の製造方法 | |
JPH0418458B2 (en]) | ||
JPS62202559A (ja) | 半導体装置及びその製造方法 | |
JPS5878457A (ja) | 半導体装置の製造方法 | |
JPS5933271B2 (ja) | 半導体装置の製造方法 | |
JPS61207076A (ja) | 半導体装置の製造方法 | |
JPH01108772A (ja) | バイポーラトランジスタの製造方法 | |
JPS5893271A (ja) | 半導体装置 | |
JPS6189667A (ja) | 半導体装置の製造方法 | |
JPH0443663A (ja) | 半導体装置およびその製造方法 | |
JPS60105249A (ja) | 不純物導入法 | |
JPS61220472A (ja) | 半導体装置の製造方法 | |
JPS6290979A (ja) | 半導体装置の製造方法 | |
JPH0140506B2 (en]) | ||
JPS5832473A (ja) | 電界効果トランジスタおよびその製造方法 | |
JPH0478009B2 (en]) | ||
JPH03242940A (ja) | 半導体装置の製造方法 | |
JPH0442833B2 (en]) | ||
JPS60251640A (ja) | 半導体装置およびその製造方法 | |
JPS6266678A (ja) | 半導体装置の製造方法 | |
JPS61258479A (ja) | 半導体装置の製造方法 | |
JPS59112616A (ja) | 半導体装置の製造方法 |