JPH0418458B2 - - Google Patents

Info

Publication number
JPH0418458B2
JPH0418458B2 JP56192183A JP19218381A JPH0418458B2 JP H0418458 B2 JPH0418458 B2 JP H0418458B2 JP 56192183 A JP56192183 A JP 56192183A JP 19218381 A JP19218381 A JP 19218381A JP H0418458 B2 JPH0418458 B2 JP H0418458B2
Authority
JP
Japan
Prior art keywords
strain
base
transistor
region
carrier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56192183A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5893272A (ja
Inventor
Shinji Onga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP56192183A priority Critical patent/JPS5893272A/ja
Publication of JPS5893272A publication Critical patent/JPS5893272A/ja
Publication of JPH0418458B2 publication Critical patent/JPH0418458B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40Crystalline structures

Landscapes

  • Bipolar Transistors (AREA)
  • Die Bonding (AREA)
JP56192183A 1981-11-30 1981-11-30 半導体装置 Granted JPS5893272A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56192183A JPS5893272A (ja) 1981-11-30 1981-11-30 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56192183A JPS5893272A (ja) 1981-11-30 1981-11-30 半導体装置

Publications (2)

Publication Number Publication Date
JPS5893272A JPS5893272A (ja) 1983-06-02
JPH0418458B2 true JPH0418458B2 (en]) 1992-03-27

Family

ID=16287053

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56192183A Granted JPS5893272A (ja) 1981-11-30 1981-11-30 半導体装置

Country Status (1)

Country Link
JP (1) JPS5893272A (en])

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7262484B2 (en) 2005-05-09 2007-08-28 International Business Machines Corporation Structure and method for performance improvement in vertical bipolar transistors

Also Published As

Publication number Publication date
JPS5893272A (ja) 1983-06-02

Similar Documents

Publication Publication Date Title
JPS5928992B2 (ja) Mosトランジスタおよびその製造方法
JPH01264253A (ja) 半導体装置の製造方法
US4046606A (en) Simultaneous location of areas having different conductivities
JPS63257231A (ja) 半導体装置の製造方法
JPH0418458B2 (en])
JPS62202559A (ja) 半導体装置及びその製造方法
JPS5878457A (ja) 半導体装置の製造方法
JPS5933271B2 (ja) 半導体装置の製造方法
JPS61207076A (ja) 半導体装置の製造方法
JPH01108772A (ja) バイポーラトランジスタの製造方法
JPS5893271A (ja) 半導体装置
JPS6189667A (ja) 半導体装置の製造方法
JPH0443663A (ja) 半導体装置およびその製造方法
JPS60105249A (ja) 不純物導入法
JPS61220472A (ja) 半導体装置の製造方法
JPS6290979A (ja) 半導体装置の製造方法
JPH0140506B2 (en])
JPS5832473A (ja) 電界効果トランジスタおよびその製造方法
JPH0478009B2 (en])
JPH03242940A (ja) 半導体装置の製造方法
JPH0442833B2 (en])
JPS60251640A (ja) 半導体装置およびその製造方法
JPS6266678A (ja) 半導体装置の製造方法
JPS61258479A (ja) 半導体装置の製造方法
JPS59112616A (ja) 半導体装置の製造方法